SMUN5116DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

2 Weeks

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

Package / Case :

6-TSSOP, SC-88, SOT-363

Published :

2012

Resistor - Base (R1) :

4.7k Ω

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Power Dissipation :

187mW

hFE Min :

160

Element Configuration :

Dual

JESD-609 Code :

e3

Min Operating Temperature :

-55°C

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Polarity :

PNP

Lead Free :

Lead Free

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Collector Emitter Voltage (VCEO) :

50V

Surface Mount :

yes

Number of Pins :

6

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Radiation Hardening :

No

ECCN Code :

EAR99

Base Part Number :

MUN51**DW1T

Pbfree Code :

yes

Reference Standard :

AEC-Q101

Additional Feature :

BUILT IN BIAS RESISTOR

Pin Count :

6

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA