SIHB12N50C-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

500V

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

28A

Published :

2014

Power Dissipation-Max :

208W Tc

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

18 ns

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

500V

Transistor Element Material :

SILICON

Fall Time (Typ) :

6 ns

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Turn-Off Delay Time :

23 ns

Number of Pins :

3

Terminal Form :

Gull wing

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.555Ohm

Rds On (Max) @ Id, Vgs :

555m Ω @ 4A, 10V

Mount :

Surface Mount

Rise Time :

35ns

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

12A

Input Capacitance (Ciss) (Max) @ Vds :

1375pF @ 25V

Weight :

1.437803g

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No