SIHB12N50C-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1375pF @ 25V

Number of Channels :

1

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

555m Ω @ 4A, 10V

Mount :

Surface Mount

Published :

2014

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

28A

Transistor Application :

SWITCHING

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

6 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

35ns

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

8 Weeks

Drain to Source Voltage (Vdss) :

500V

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

12A

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Weight :

1.437803g

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Drain-source On Resistance-Max :

0.555Ohm

DS Breakdown Voltage-Min :

500V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

208W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time :

18 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

23 ns