SIHB12N50C-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

555m Ω @ 4A, 10V

Pin Count :

4

Drain to Source Voltage (Vdss) :

500V

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

28A

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

12A

Pbfree Code :

yes

Rise Time :

35ns

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.555Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

23 ns

Weight :

1.437803g

FET Type :

N-Channel

DS Breakdown Voltage-Min :

500V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Element Configuration :

Single

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate to Source Voltage (Vgs) :

30V

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Transistor Application :

SWITCHING

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

208W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Published :

2014

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

8 Weeks

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

1375pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Number of Pins :

3

Radiation Hardening :

No

Turn On Delay Time :

18 ns

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

6 ns