SIHB11N80E-GE3

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Mfr.Part #
SIHB11N80E-GE3
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 800V 12A D2PAK
Stock
6,284
In Stock :
6,284

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
1670pF @ 100V
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
179W Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Factory Lead Time :
18 Weeks
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
88nC @ 10V
FET Type :
N-Channel
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Supplier Device Package :
D2PAK (TO-263)
Series :
E
Drain to Source Voltage (Vdss) :
800V
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
440mOhm @ 5.5A, 10V
Datasheets
SIHB11N80E-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHB11N80E-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, SIHB11N80E-GE3 pinout, SIHB11N80E-GE3 datasheet PDF, SIHB11N80E-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHB11N80E-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHB11N80E-GE3


N-Channel 440mOhm @ 5.5A, 10V ±30V 1670pF @ 100V 88nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SIHB11N80E-GE3 Overview


A device's maximum input capacitance is 1670pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

SIHB11N80E-GE3 Features


a 800V drain to source voltage (Vdss)


SIHB11N80E-GE3 Applications


There are a lot of Vishay Siliconix
SIHB11N80E-GE3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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