SI8401DB-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Resistance :

65mOhm

Rds On (Max) @ Id, Vgs :

65m Ω @ 1A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Length :

1.6mm

Number of Channels :

1

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-20V

Series :

TrenchFET®

Width :

1.6mm

Terminal Position :

BOTTOM

Published :

2013

Terminal Form :

Ball

Nominal Vgs :

-4.5 V

Number of Pins :

4

Termination :

SMD/SMT

Power Dissipation-Max :

1.47W Ta

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

-3.6A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Element Configuration :

Single

Threshold Voltage :

-4.5V

REACH SVHC :

Unknown

Turn On Delay Time :

17 ns

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Rise Time :

28ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

JESD-609 Code :

e1

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.77W

Number of Terminations :

4

Vgs (Max) :

±12V

Pbfree Code :

yes

Lead Free :

Lead Free

Turn-Off Delay Time :

88 ns

Package / Case :

4-XFBGA, CSPBGA

Fall Time (Typ) :

28 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate to Source Voltage (Vgs) :

12V

Pin Count :

4

Height :

360μm

Factory Lead Time :

33 Weeks