SI8401DB-T1-E3
- Mfr.Part #
- SI8401DB-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 4-XFBGA, CSPBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3.6A 4MICROFOOT
- Stock
- 50,838
- In Stock :
- 50,838
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Ta
- Vgs(th) (Max) @ Id :
- 1.4V @ 250μA
- Number of Pins :
- 4
- Threshold Voltage :
- -4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 88 ns
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Nominal Vgs :
- -4.5 V
- Power Dissipation :
- 2.77W
- Published :
- 2013
- Resistance :
- 65mOhm
- FET Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 12V
- Pin Count :
- 4
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 1A, 4.5V
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.6mm
- Fall Time (Typ) :
- 28 ns
- Rise Time :
- 28ns
- REACH SVHC :
- Unknown
- Pbfree Code :
- yes
- Package / Case :
- 4-XFBGA, CSPBGA
- Drain to Source Voltage (Vdss) :
- 20V
- Number of Elements :
- 1
- Terminal Form :
- Ball
- Power Dissipation-Max :
- 1.47W Ta
- Series :
- TrenchFET®
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±12V
- Height :
- 360μm
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- -3.6A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Channels :
- 1
- Radiation Hardening :
- No
- Turn On Delay Time :
- 17 ns
- Factory Lead Time :
- 33 Weeks
- Length :
- 1.6mm
- Drain to Source Breakdown Voltage :
- -20V
- Number of Terminations :
- 4
- Terminal Position :
- BOTTOM
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Termination :
- SMD/SMT
- Element Configuration :
- Single
- Datasheets
- SI8401DB-T1-E3
P-Channel Tape & Reel (TR) 65m Ω @ 1A, 4.5V ±12V 17nC @ 4.5V 20V 4-XFBGA, CSPBGA
SI8401DB-T1-E3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -3.6A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 88 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -4.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.
SI8401DB-T1-E3 Features
a continuous drain current (ID) of -3.6A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 88 ns
a threshold voltage of -4.5V
a 20V drain to source voltage (Vdss)
SI8401DB-T1-E3 Applications
There are a lot of Vishay Siliconix
SI8401DB-T1-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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