SI8401DB-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.77W

Operating Mode :

ENHANCEMENT MODE

Height :

360μm

Number of Terminations :

4

Resistance :

65mOhm

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

33 Weeks

Width :

1.6mm

Drain to Source Breakdown Voltage :

-20V

Termination :

SMD/SMT

Lead Free :

Lead Free

JESD-609 Code :

e1

Threshold Voltage :

-4.5V

Pbfree Code :

yes

Power Dissipation-Max :

1.47W Ta

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

REACH SVHC :

Unknown

Published :

2013

Rds On (Max) @ Id, Vgs :

65m Ω @ 1A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Terminal Form :

Ball

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

28ns

Number of Elements :

1

Nominal Vgs :

-4.5 V

Fall Time (Typ) :

28 ns

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pin Count :

4

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

88 ns

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Continuous Drain Current (ID) :

-3.6A

Length :

1.6mm

Turn On Delay Time :

17 ns

Vgs (Max) :

±12V

Package / Case :

4-XFBGA, CSPBGA

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Number of Channels :

1

Number of Pins :

4

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON