SI8401DB-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

28ns

FET Type :

P-Channel

Vgs (Max) :

±12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn-Off Delay Time :

88 ns

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

20V

Fall Time (Typ) :

28 ns

Number of Elements :

1

Terminal Position :

BOTTOM

Terminal Form :

Ball

Width :

1.6mm

REACH SVHC :

Unknown

Height :

360μm

Number of Terminations :

4

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Element Configuration :

Single

Continuous Drain Current (ID) :

-3.6A

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Package / Case :

4-XFBGA, CSPBGA

Power Dissipation-Max :

1.47W Ta

Turn On Delay Time :

17 ns

Mount :

Surface Mount

Series :

TrenchFET®

Published :

2013

Number of Pins :

4

Nominal Vgs :

-4.5 V

Power Dissipation :

2.77W

Rds On (Max) @ Id, Vgs :

65m Ω @ 1A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Transistor Application :

SWITCHING

Factory Lead Time :

33 Weeks

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Operating Temperature :

-55°C~150°C TJ

Length :

1.6mm

Pin Count :

4

Threshold Voltage :

-4.5V

Lead Free :

Lead Free

JESD-609 Code :

e1

ECCN Code :

EAR99

Radiation Hardening :

No

Transistor Element Material :

SILICON

Resistance :

65mOhm

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-20V