SI8401DB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Terminal Form :

Ball

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

Terminal Position :

BOTTOM

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.095Ohm

Height :

360μm

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Fall Time (Typ) :

28 ns

Package / Case :

4-XFBGA, CSPBGA

Factory Lead Time :

33 Weeks

Continuous Drain Current (ID) :

-4.9A

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

65m Ω @ 1A, 4.5V

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Rise Time :

28ns

Width :

1.6mm

Turn-Off Delay Time :

88 ns

Power Dissipation-Max :

1.47W Ta

Mount :

Surface Mount

Pin Count :

4

Length :

1.6mm

Vgs (Max) :

±12V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

12V

Number of Terminations :

4

Drain Current-Max (Abs) (ID) :

3.6A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Power Dissipation :

1.47W

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Published :

2017

Number of Elements :

1

Turn On Delay Time :

17 ns

JESD-609 Code :

e3

Radiation Hardening :

No

Element Configuration :

Single

Number of Pins :

4

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE