SI8401DB-T1-E1

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Mfr.Part #
SI8401DB-T1-E1
Manufacturer
Vishay
Package / Case
4-XFBGA, CSPBGA
Datasheet
Download
Description
MOSFET P-CH 20V 3.6A 4MICROFOOT
Stock
58,711
In Stock :
58,711

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Drain-source On Resistance-Max :
0.095Ohm
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
40
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
12V
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Height :
360μm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±12V
RoHS Status :
ROHS3 Compliant
Length :
1.6mm
Pbfree Code :
yes
Mount :
Surface Mount
Number of Pins :
4
Continuous Drain Current (ID) :
-4.9A
Current - Continuous Drain (Id) @ 25°C :
3.6A Ta
Transistor Application :
SWITCHING
Terminal Form :
Ball
Package / Case :
4-XFBGA, CSPBGA
Power Dissipation-Max :
1.47W Ta
Terminal Finish :
Matte Tin (Sn)
Series :
TrenchFET®
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Element Configuration :
Single
Factory Lead Time :
33 Weeks
Fall Time (Typ) :
28 ns
DS Breakdown Voltage-Min :
20V
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
1.4V @ 250μA
Turn-Off Delay Time :
88 ns
Number of Elements :
1
Power Dissipation :
1.47W
Terminal Position :
BOTTOM
Pin Count :
4
Width :
1.6mm
Rds On (Max) @ Id, Vgs :
65m Ω @ 1A, 4.5V
Rise Time :
28ns
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 4.5V
Drain to Source Voltage (Vdss) :
20V
Drain Current-Max (Abs) (ID) :
3.6A
Number of Channels :
1
Published :
2017
Packaging :
Tape and Reel (TR)
Turn On Delay Time :
17 ns
FET Type :
P-Channel
Number of Terminations :
4
Datasheets
SI8401DB-T1-E1
Introducing Transistors - FETs, MOSFETs - Single Vishay SI8401DB-T1-E1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Package / Case:4-XFBGA, CSPBGA, Mounting Type:Surface Mount, Number of Channels:1, Number of Terminations:4, SI8401DB-T1-E1 pinout, SI8401DB-T1-E1 datasheet PDF, SI8401DB-T1-E1 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI8401DB-T1-E1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI8401DB-T1-E1


P-Channel Tape & Reel (TR) 65m Ω @ 1A, 4.5V ±12V 17nC @ 4.5V 20V 4-XFBGA, CSPBGA

SI8401DB-T1-E1 Overview


This device has a continuous drain current (ID) of [-4.9A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 3.6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 88 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).

SI8401DB-T1-E1 Features


a continuous drain current (ID) of -4.9A
the turn-off delay time is 88 ns
a 20V drain to source voltage (Vdss)


SI8401DB-T1-E1 Applications


There are a lot of Vishay Siliconix
SI8401DB-T1-E1 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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