SI8401DB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Form :

Ball

FET Type :

P-Channel

Vgs (Max) :

±12V

Power Dissipation-Max :

1.47W Ta

Factory Lead Time :

33 Weeks

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

3.6A

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.47W

Transistor Application :

SWITCHING

Number of Elements :

1

Continuous Drain Current (ID) :

-4.9A

Published :

2017

Height :

360μm

Series :

TrenchFET®

Package / Case :

4-XFBGA, CSPBGA

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Number of Terminations :

4

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Turn On Delay Time :

17 ns

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.6mm

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

Mount :

Surface Mount

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Pin Count :

4

Turn-Off Delay Time :

88 ns

Drain-source On Resistance-Max :

0.095Ohm

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Element Configuration :

Single

Number of Channels :

1

Terminal Position :

BOTTOM

Rise Time :

28ns

Number of Pins :

4

Fall Time (Typ) :

28 ns

Terminal Finish :

Matte Tin (Sn)

Length :

1.6mm

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

65m Ω @ 1A, 4.5V