SI8401DB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Number of Elements :

1

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Turn On Delay Time :

17 ns

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

65m Ω @ 1A, 4.5V

Drain Current-Max (Abs) (ID) :

3.6A

Rise Time :

28ns

Gate to Source Voltage (Vgs) :

12V

Width :

1.6mm

Radiation Hardening :

No

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Element Configuration :

Single

Terminal Form :

Ball

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

DS Breakdown Voltage-Min :

20V

Length :

1.6mm

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Power Dissipation :

1.47W

Vgs (Max) :

±12V

Power Dissipation-Max :

1.47W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

28 ns

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Package / Case :

4-XFBGA, CSPBGA

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Pin Count :

4

Number of Pins :

4

Series :

TrenchFET®

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.095Ohm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Turn-Off Delay Time :

88 ns

FET Type :

P-Channel

Terminal Finish :

Matte Tin (Sn)

Height :

360μm

Continuous Drain Current (ID) :

-4.9A

Factory Lead Time :

33 Weeks

Number of Terminations :

4

Published :

2017