SI7738DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

7.7A

Rise Time :

10ns

Number of Elements :

1

Length :

4.9mm

Drain Current-Max (Abs) (ID) :

30A

Number of Pins :

8

Radiation Hardening :

No

FET Type :

N-Channel

Published :

2013

Package / Case :

PowerPAK® SO-8

Height :

1.04mm

Factory Lead Time :

14 Weeks

Mounting Type :

Surface Mount

Pbfree Code :

yes

Terminal Form :

C BEND

Width :

5.89mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Drain to Source Breakdown Voltage :

150V

Pulsed Drain Current-Max (IDM) :

30A

Case Connection :

DRAIN

Turn On Delay Time :

15 ns

JESD-609 Code :

e3

Number of Channels :

1

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

ECCN Code :

EAR99

Mount :

Surface Mount

Turn-Off Delay Time :

25 ns

Power Dissipation-Max :

5.4W Ta 96W Tc

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

45 mJ

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 75V

RoHS Status :

ROHS3 Compliant

Weight :

506.605978mg

Pin Count :

8

JESD-30 Code :

R-XDSO-C5

Power Dissipation :

5.4W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

38m Ω @ 7.7A, 10V

Operating Temperature :

-55°C~150°C TJ