SI7716ADN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

3.05mm

Radiation Hardening :

No

Number of Elements :

1

Threshold Voltage :

2.5V

Power Dissipation-Max :

3.5W Ta 27.7W Tc

Terminal Position :

Dual

Terminal Finish :

MATTE TIN

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

10 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 10A, 10V

Terminal Form :

C BEND

Transistor Element Material :

SILICON

Turn-Off Delay Time :

14 ns

Width :

3.05mm

ECCN Code :

EAR99

Pin Count :

8

Turn On Delay Time :

15 ns

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

Unknown

Power Dissipation :

3.5W

Continuous Drain Current (ID) :

16A

Number of Terminations :

5

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

846pF @ 15V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Mounting Type :

Surface Mount

Number of Channels :

1

FET Type :

N-Channel

Resistance :

13.5mOhm

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

S-XDSO-C5

Pulsed Drain Current-Max (IDM) :

32A

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Rise Time :

12ns

Series :

TrenchFET®

Height :

1.04mm

Lead Free :

Lead Free

Package / Case :

PowerPAK® 1212-8