SI2371EDS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Terminal Position :

Dual

Element Configuration :

Single

Terminal Form :

Gull wing

Number of Pins :

3

Series :

TrenchFET®

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

1.12mm

REACH SVHC :

No SVHC

FET Type :

P-Channel

Transistor Element Material :

SILICON

Factory Lead Time :

14 Weeks

Drain to Source Breakdown Voltage :

-30V

Rise Time :

65ns

Number of Elements :

1

Power Dissipation-Max :

1W Ta 1.7W Tc

Turn-Off Delay Time :

52 ns

Max Junction Temperature (Tj) :

150°C

Terminal Finish :

MATTE TIN

Number of Terminations :

3

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

-4.8A

Radiation Hardening :

No

Published :

2013

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.7A, 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

-600mV

Power Dissipation :

1.7W

JESD-609 Code :

e3

Turn On Delay Time :

7 ns

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

4.8A Tc

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Vgs (Max) :

±12V

Resistance :

45mOhm

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Transistor Application :

SWITCHING

Fall Time (Typ) :

62 ns

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

12V