SI2301BDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.12mm

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.8A, 4.5V

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Rise Time :

40ns

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

8V

REACH SVHC :

Unknown

Drain to Source Breakdown Voltage :

-20V

Number of Elements :

1

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

-55°C~150°C TJ

Weight :

1.437803g

ECCN Code :

EAR99

Turn On Delay Time :

20 ns

Turn-Off Delay Time :

30 ns

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Width :

1.4mm

Resistance :

100MOhm

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Published :

2003

Radiation Hardening :

No

Number of Channels :

1

Terminal Position :

Dual

Length :

3.04mm

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

-2.2A

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

700mW

Vgs(th) (Max) @ Id :

950mV @ 250μA

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

375pF @ 6V

Threshold Voltage :

-950mV

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Fall Time (Typ) :

40 ns

Max Junction Temperature (Tj) :

150°C

Nominal Vgs :

-950 mV

Pin Count :

3

Power Dissipation-Max :

700mW Ta

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

14 Weeks

Vgs (Max) :

±8V

Number of Terminations :

3

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes