SI2343DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

1.4mm

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2009

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

Unknown

Turn-Off Delay Time :

31 ns

Radiation Hardening :

No

Number of Channels :

1

Pin Count :

3

Fall Time (Typ) :

15 ns

Drain to Source Breakdown Voltage :

-30V

Number of Elements :

1

Factory Lead Time :

33 Weeks

Lead Free :

Lead Free

Continuous Drain Current (ID) :

-4A

FET Type :

P-Channel

Package / Case :

TO-236-3, SC-59, SOT-23-3

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

750mW Ta

Mount :

Surface Mount

Number of Terminations :

3

Height :

1.12mm

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Length :

3.04mm

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Weight :

1.437803g

Contact Plating :

Tin

Power Dissipation :

750mW

Nominal Vgs :

-1 V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

53m Ω @ 4A, 10V

Turn On Delay Time :

10 ns

ECCN Code :

EAR99

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

JESD-609 Code :

e3

Terminal Position :

Dual

Threshold Voltage :

-1V

Max Junction Temperature (Tj) :

150°C

Gate to Source Voltage (Vgs) :

20V

Resistance :

53mOhm

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Rise Time :

15ns

Pbfree Code :

yes