SI2343DS-T1

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Mfr.Part #
SI2343DS-T1
Manufacturer
Vishay
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 30V 3.1A SOT23-3
Stock
23,857
In Stock :
23,857

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Series :
TrenchFET®
Rds On (Max) @ Id, Vgs :
53mOhm @ 4A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Supplier Device Package :
SOT-23-3 (TO-236)
Published :
2013
Weight :
1.437803g
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-236-3, SC-59, SOT-23-3
Element Configuration :
Single
Rise Time :
15ns
Input Capacitance (Ciss) (Max) @ Vds :
540pF @ 15V
Number of Pins :
3
Turn On Delay Time :
10 ns
Gate to Source Voltage (Vgs) :
20V
FET Type :
P-Channel
Packaging :
Tape and Reel (TR)
Power Dissipation-Max :
750mW Ta
Current - Continuous Drain (Id) @ 25°C :
3.1A Ta
Number of Channels :
1
Length :
3.04mm
Min Operating Temperature :
-55°C
Max Operating Temperature :
150°C
Continuous Drain Current (ID) :
3.1A
Input Capacitance :
540pF
Rds On Max :
53 mΩ
Vgs(th) (Max) @ Id :
3V @ 250µA
Drain to Source Resistance :
53mOhm
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
1.02mm
Fall Time (Typ) :
15 ns
Turn-Off Delay Time :
31 ns
Width :
1.4mm
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Datasheets
SI2343DS-T1
Introducing Transistors - FETs, MOSFETs - Single Vishay SI2343DS-T1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Number of Channels:1, Mounting Type:Surface Mount, SI2343DS-T1 pinout, SI2343DS-T1 datasheet PDF, SI2343DS-T1 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI2343DS-T1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI2343DS-T1


P-Channel Tape & Reel (TR) 53mOhm @ 4A, 10V ±20V 540pF @ 15V 21nC @ 10V 30V TO-236-3, SC-59, SOT-23-3

SI2343DS-T1 Overview


A device's maximal input capacitance is 540pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.1A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 31 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 53mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

SI2343DS-T1 Features


a continuous drain current (ID) of 3.1A
the turn-off delay time is 31 ns
single MOSFETs transistor is 53mOhm
a 30V drain to source voltage (Vdss)


SI2343DS-T1 Applications


There are a lot of Vishay Siliconix
SI2343DS-T1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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