SI2337DS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

80V

Width :

1.4mm

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

15 ns

Weight :

1.437803g

Continuous Drain Current (ID) :

-2.2A

JESD-609 Code :

e3

Height :

1.02mm

Fall Time (Typ) :

12 ns

Published :

2014

Drain to Source Breakdown Voltage :

-80V

Element Configuration :

Single

Power Dissipation :

760mW

Vgs (Max) :

±20V

Resistance :

270mOhm

Rise Time :

18ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Pin Count :

3

Number of Elements :

1

Number of Channels :

1

REACH SVHC :

No SVHC

Threshold Voltage :

-4V

Series :

TrenchFET®

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

270m Ω @ 1.2A, 10V

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Power Dissipation-Max :

760mW Ta 2.5W Tc

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 40V

Turn-Off Delay Time :

20 ns

Length :

3.04mm

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Operating Temperature :

-50°C~150°C TJ

Number of Pins :

3

Nominal Vgs :

-4 V

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)