SI2337DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-80V

ECCN Code :

EAR99

Published :

2011

Pin Count :

3

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Rise Time :

15ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

270m Ω @ 1.2A, 10V

Series :

TrenchFET®

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Height :

1.12mm

Operating Mode :

ENHANCEMENT MODE

Length :

3.04mm

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

80V

Mounting Type :

Surface Mount

Threshold Voltage :

-2V

Time@Peak Reflow Temperature-Max (s) :

30

Weight :

1.437803g

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

RoHS Status :

ROHS3 Compliant

Width :

1.4mm

Operating Temperature :

-50°C~150°C TJ

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

14 Weeks

Turn On Delay Time :

10 ns

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

15 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 40V

Gate to Source Voltage (Vgs) :

20V

Resistance :

270mOhm

Power Dissipation :

760mW

Number of Terminations :

3

JESD-609 Code :

e3

Pbfree Code :

yes

Terminal Position :

Dual

Turn-Off Delay Time :

20 ns

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

-2.2A

FET Type :

P-Channel

Power Dissipation-Max :

760mW Ta 2.5W Tc

Peak Reflow Temperature (Cel) :

260

Number of Channels :

1

Number of Pins :

3

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA