SI2334DS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

10ns

Threshold Voltage :

400mV

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

4.9A Tc

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e3

Radiation Hardening :

No

Number of Elements :

1

REACH SVHC :

No SVHC

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.044Ohm

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

3

Factory Lead Time :

15 Weeks

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Vgs (Max) :

±8V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

8 ns

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

44m Ω @ 4.2A, 4.5V

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

634pF @ 15V

Mounting Type :

Surface Mount

Power Dissipation :

1.3W

Published :

2011

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

8V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

4.9A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Vgs :

400 mV

Power Dissipation-Max :

1.3W Ta 1.7W Tc