SI2333CDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mount :

Surface Mount

FET Type :

P-Channel

Number of Terminations :

3

ECCN Code :

EAR99

Continuous Drain Current (ID) :

5.1A

Terminal Finish :

Matte Tin (Sn)

Width :

1.397mm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Lead Free :

Lead Free

Turn On Delay Time :

13 ns

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Threshold Voltage :

-400mV

Fall Time (Typ) :

35 ns

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1225pF @ 6V

Gate to Source Voltage (Vgs) :

8V

Drain to Source Voltage (Vdss) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

35m Ω @ 5.1A, 4.5V

Height :

1.016mm

Power Dissipation :

1.25W

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Length :

3.0226mm

Radiation Hardening :

No

Weight :

1.437803g

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Number of Pins :

3

Power Dissipation-Max :

1.25W Ta 2.5W Tc

Current - Continuous Drain (Id) @ 25°C :

7.1A Tc

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

JESD-609 Code :

e3

Series :

TrenchFET®

Vgs (Max) :

±8V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-12V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn-Off Delay Time :

45 ns

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

Rise Time :

35ns

Resistance :

35mOhm