SI2319DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

-3 V

Published :

2011

Mounting Type :

Surface Mount

Rise Time :

15ns

Turn-Off Delay Time :

25 ns

Time@Peak Reflow Temperature-Max (s) :

30

Voltage :

40V

Pin Count :

3

Rds On (Max) @ Id, Vgs :

82m Ω @ 3A, 10V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Series :

TrenchFET®

Fall Time (Typ) :

15 ns

Mount :

Surface Mount

REACH SVHC :

Unknown

Turn On Delay Time :

7 ns

Number of Terminations :

3

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 20V

Continuous Drain Current (ID) :

-3A

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Terminal Form :

Gull wing

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Current :

3A

Transistor Element Material :

SILICON

Element Configuration :

Single

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Width :

1.4mm

Number of Pins :

3

Power Dissipation-Max :

750mW Ta

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

-3V

Radiation Hardening :

No

Pbfree Code :

yes

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.12mm

Resistance :

82mOhm

Length :

3.04mm

Number of Channels :

1

Drain to Source Breakdown Voltage :

-40V

Max Junction Temperature (Tj) :

150°C

Power Dissipation :

750mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Weight :

1.437803g