SI2316DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current :

2A

Terminal Position :

Dual

Resistance :

50mOhm

Height :

1.02mm

FET Type :

N-Channel

Vgs (Max) :

±20V

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

14 ns

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

800mV @ 250µA (Min)

Mounting Type :

Surface Mount

Pbfree Code :

yes

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Length :

3.04mm

Terminal Form :

Gull wing

Power Dissipation :

700mW

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

3

Power Dissipation-Max :

700mW Ta

Number of Elements :

1

Turn On Delay Time :

9 ns

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Voltage :

30V

Rise Time :

9ns

REACH SVHC :

Unknown

ECCN Code :

EAR99

Number of Pins :

3

Published :

2011

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

215pF @ 15V

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

3.4A

Radiation Hardening :

No

JESD-609 Code :

e3

Series :

TrenchFET®

Nominal Vgs :

800 mV

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Weight :

1.437803g

Width :

1.4mm

Fall Time (Typ) :

9 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Channels :

1

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

50m Ω @ 3.4A, 10V