SI2315BDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

-3A

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Voltage :

12V

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

-12V

Turn-Off Delay Time :

50 ns

Pin Count :

3

Rise Time :

35ns

Packaging :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks

Width :

1.4mm

Number of Elements :

1

Gate to Source Voltage (Vgs) :

8V

Mount :

Surface Mount

ECCN Code :

EAR99

Element Configuration :

Single

Power Dissipation-Max :

750mW Ta

Threshold Voltage :

-900mV

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Number of Channels :

1

Pbfree Code :

yes

Dual Supply Voltage :

-12V

Weight :

1.437803g

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Radiation Hardening :

No

Turn On Delay Time :

15 ns

Fall Time (Typ) :

35 ns

Vgs(th) (Max) @ Id :

900mV @ 250μA

JESD-609 Code :

e3

Vgs (Max) :

±8V

Termination :

SMD/SMT

Height :

1.12mm

Rds On (Max) @ Id, Vgs :

50m Ω @ 3.85A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

-900 mV

Resistance :

50mOhm

Published :

2005

Current :

3A

Length :

3.04mm

Current - Continuous Drain (Id) @ 25°C :

3A Ta

FET Type :

P-Channel

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

715pF @ 6V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Power Dissipation :

750mW

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3