SI2307BDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

78m Ω @ 3.2A, 10V

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

3

FET Type :

P-Channel

ECCN Code :

EAR99

Turn-Off Delay Time :

25 ns

Element Configuration :

Single

Resistance :

78mOhm

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

750mW

Drain to Source Breakdown Voltage :

-30V

Weight :

1.437803g

Transistor Element Material :

SILICON

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

-2.5A

Number of Elements :

1

JESD-609 Code :

e3

Fall Time (Typ) :

12 ns

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Height :

1.02mm

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

1.4mm

Nominal Vgs :

-3 V

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Rise Time :

12ns

Power Dissipation-Max :

750mW Ta

Length :

3.04mm

Lead Free :

Lead Free

Pin Count :

3

Terminal Position :

Dual

Radiation Hardening :

No

Turn On Delay Time :

9 ns

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 15V

Published :

2008

Threshold Voltage :

-3V