SI2304DDS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Resistance :

60mOhm

REACH SVHC :

No SVHC

Turn On Delay Time :

12 ns

Power Dissipation :

1.1W

Vgs (Max) :

±20V

Turn-Off Delay Time :

12 ns

Lead Free :

Lead Free

Number of Pins :

3

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 15V

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.2A, 10V

Rise Time :

50ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

2.2 V

Continuous Drain Current (ID) :

3.6A

Mounting Type :

Surface Mount

Published :

2016

Radiation Hardening :

No

Power Dissipation-Max :

1.1W Ta 1.7W Tc

JESD-609 Code :

e3

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Drain to Source Breakdown Voltage :

30V

Weight :

1.437803g

Number of Channels :

1

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

22 ns

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Series :

TrenchFET®

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Number of Elements :

1

Threshold Voltage :

2.2V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

3.3A Ta 3.6A Tc

Peak Reflow Temperature (Cel) :

260