SI2302DDS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

7ns

Number of Channels :

1

Series :

TrenchFET®

Published :

2012

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

8V

Drain-source On Resistance-Max :

0.057Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

20V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

8 ns

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Pbfree Code :

yes

Turn-Off Delay Time :

30 ns

Continuous Drain Current (ID) :

2.6A

Mounting Type :

Surface Mount

Power Dissipation-Max :

710mW Ta

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

57m Ω @ 3.6A, 4.5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Terminations :

3

Terminal Form :

Gull wing

Weight :

1.437803g

Drain to Source Voltage (Vdss) :

20V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

710mW

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.9A Tj

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Elements :

1

Factory Lead Time :

14 Weeks

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

7 ns

Vgs(th) (Max) @ Id :

850mV @ 250μA

Vgs (Max) :

±8V