SI2302CDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id :

850mV @ 250μA

Number of Pins :

3

Threshold Voltage :

400mV

Turn-Off Delay Time :

30 ns

Turn On Delay Time :

8 ns

Series :

TrenchFET®

Pin Count :

3

Radiation Hardening :

No

Mount :

Surface Mount

Rise Time :

7ns

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

20V

Weight :

1.437803g

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Resistance :

57mOhm

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

710mW Ta

Terminal Position :

Dual

Mounting Type :

Surface Mount

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 4.5V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

2.6A

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

Unknown

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Length :

3.04mm

Height :

1.12mm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pbfree Code :

yes

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

1

Power Dissipation :

710mW

Lead Free :

Lead Free

Fall Time (Typ) :

7 ns

Input Capacitance :

112pF

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

57m Ω @ 3.6A, 4.5V

Published :

2012

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Max Junction Temperature (Tj) :

150°C

Width :

1.4mm

Gate to Source Voltage (Vgs) :

8V

FET Type :

N-Channel