SI2302ADS-T1

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Mfr.Part #
SI2302ADS-T1
Manufacturer
Vishay
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 20V 2.1A SOT23-3
Stock
191,051
In Stock :
191,051

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Supplier Device Package :
SOT-23-3 (TO-236)
Gate to Source Voltage (Vgs) :
8V
Packaging :
Tape and Reel (TR)
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 4.5V
Min Operating Temperature :
-55°C
Weight :
1.437803g
Number of Channels :
1
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 10V
Power Dissipation-Max :
700mW Ta
Power Dissipation :
900mW
Rds On (Max) @ Id, Vgs :
60mOhm @ 3.6A, 4.5V
Fall Time (Typ) :
55 ns
Vgs(th) (Max) @ Id :
1.2V @ 50µA
Drain to Source Voltage (Vdss) :
20V
Max Operating Temperature :
150°C
Package / Case :
TO-236-3, SC-59, SOT-23-3
Length :
3.04mm
Rds On Max :
60 mΩ
Mount :
Surface Mount
Input Capacitance :
300pF
Current - Continuous Drain (Id) @ 25°C :
2.1A Ta
Turn-Off Delay Time :
16 ns
Mounting Type :
Surface Mount
FET Type :
N-Channel
Element Configuration :
Single
Drain to Source Resistance :
60mOhm
Height :
1.02mm
Forward Voltage :
760mV
Continuous Drain Current (ID) :
2.1A
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
20V
Rise Time :
55ns
Width :
1.4mm
Turn On Delay Time :
7 ns
Vgs (Max) :
±8V
RoHS Status :
ROHS3 Compliant
Datasheets
SI2302ADS-T1
Introducing Transistors - FETs, MOSFETs - Single Vishay SI2302ADS-T1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, SI2302ADS-T1 pinout, SI2302ADS-T1 datasheet PDF, SI2302ADS-T1 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI2302ADS-T1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI2302ADS-T1


N-Channel Tape & Reel (TR) 60mOhm @ 3.6A, 4.5V ±8V 300pF @ 10V 10nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3

SI2302ADS-T1 Overview


The maximum input capacitance of this device is 300pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.1A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 16 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 60mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.

SI2302ADS-T1 Features


a continuous drain current (ID) of 2.1A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 60mOhm
a 20V drain to source voltage (Vdss)


SI2302ADS-T1 Applications


There are a lot of Vishay Siliconix
SI2302ADS-T1 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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