SI2302ADS-T1
- Mfr.Part #
- SI2302ADS-T1
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 2.1A SOT23-3
- Stock
- 191,051
- In Stock :
- 191,051
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Gate to Source Voltage (Vgs) :
- 8V
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 4.5V
- Min Operating Temperature :
- -55°C
- Weight :
- 1.437803g
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 10V
- Power Dissipation-Max :
- 700mW Ta
- Power Dissipation :
- 900mW
- Rds On (Max) @ Id, Vgs :
- 60mOhm @ 3.6A, 4.5V
- Fall Time (Typ) :
- 55 ns
- Vgs(th) (Max) @ Id :
- 1.2V @ 50µA
- Drain to Source Voltage (Vdss) :
- 20V
- Max Operating Temperature :
- 150°C
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Length :
- 3.04mm
- Rds On Max :
- 60 mΩ
- Mount :
- Surface Mount
- Input Capacitance :
- 300pF
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A Ta
- Turn-Off Delay Time :
- 16 ns
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Drain to Source Resistance :
- 60mOhm
- Height :
- 1.02mm
- Forward Voltage :
- 760mV
- Continuous Drain Current (ID) :
- 2.1A
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 20V
- Rise Time :
- 55ns
- Width :
- 1.4mm
- Turn On Delay Time :
- 7 ns
- Vgs (Max) :
- ±8V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SI2302ADS-T1

N-Channel Tape & Reel (TR) 60mOhm @ 3.6A, 4.5V ±8V 300pF @ 10V 10nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3
SI2302ADS-T1 Overview
The maximum input capacitance of this device is 300pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.1A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 16 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 60mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.
SI2302ADS-T1 Features
a continuous drain current (ID) of 2.1A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 60mOhm
a 20V drain to source voltage (Vdss)
SI2302ADS-T1 Applications
There are a lot of Vishay Siliconix
SI2302ADS-T1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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