SI1307DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

850mA Ta

Pin Count :

3

Pbfree Code :

yes

Terminal Position :

Dual

Continuous Drain Current (ID) :

850mA

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Rise Time :

32ns

Power Dissipation :

290mW

Qualification Status :

Not Qualified

Power Dissipation-Max :

290mW Ta

Length :

2.1844mm

Resistance :

290mOhm

Mount :

Surface Mount

Fall Time (Typ) :

32 ns

Gate to Source Voltage (Vgs) :

8V

Height :

990.6μm

Drain to Source Breakdown Voltage :

-12V

Number of Elements :

1

Turn-Off Delay Time :

17 ns

Number of Terminations :

3

Series :

TrenchFET®

Reach Compliance Code :

Unknown

Package / Case :

SC-70, SOT-323

Element Configuration :

Single

Vgs (Max) :

±8V

Current :

68A

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

JESD-609 Code :

e3

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Voltage :

12V

Terminal Finish :

MATTE TIN

Turn On Delay Time :

7.5 ns

Width :

1.3462mm

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

290m Ω @ 1A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Transistor Element Material :

SILICON

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant