SI1302DL-T1-E3
- Mfr.Part #
- SI1302DL-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 600MA SC70-3
- Stock
- 10,567
- In Stock :
- 10,567
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Width :
- 1.25mm
- Qualification Status :
- Not Qualified
- Fall Time (Typ) :
- 7 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 5 ns
- Drain Current-Max (Abs) (ID) :
- 0.6A
- Peak Reflow Temperature (Cel) :
- 260
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SC-70, SOT-323
- Weight :
- 6.208546mg
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Rise Time :
- 8ns
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 640mA
- Length :
- 2mm
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Nominal Vgs :
- 3 V
- Turn-Off Delay Time :
- 8 ns
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 600mA Ta
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 280mW Ta
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 14 Weeks
- Reach Compliance Code :
- Unknown
- Packaging :
- Tape and Reel (TR)
- Series :
- TrenchFET®
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Resistance :
- 480mOhm
- Threshold Voltage :
- 1V
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 1.4nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 480m Ω @ 600mA, 10V
- Mount :
- Surface Mount
- Published :
- 2009
- Terminal Finish :
- Matte Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Height :
- 1mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Power Dissipation :
- 310mW
- Datasheets
- SI1302DL-T1-E3
N-Channel Tape & Reel (TR) 480m Ω @ 600mA, 10V ±20V 1.4nC @ 10V SC-70, SOT-323
SI1302DL-T1-E3 Overview
This device conducts a continuous drain current (ID) of 640mA, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.6A.When the device is turned off, a turn-off delay time of 8 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SI1302DL-T1-E3 Features
a continuous drain current (ID) of 640mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 8 ns
a threshold voltage of 1V
SI1302DL-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1302DL-T1-E3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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