SGSD100

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Mfr.Part #
SGSD100
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN DARL 80V 25A TO247-3
Stock
49,153
In Stock :
49,153

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
3.5V @ 80mA, 20A
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Max Operating Temperature :
150°C
Element Configuration :
Single
Packaging :
Tube
Reach Compliance Code :
not_compliant
Polarity :
NPN
Package / Case :
TO-247-3
Base Part Number :
SGSD100
Number of Elements :
1
Current Rating :
25A
VCEsat-Max :
3.5 V
Emitter Base Voltage (VEBO) :
3.3V
Max Power Dissipation :
130W
Min Operating Temperature :
-65°C
ECCN Code :
EAR99
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Max Collector Current :
25A
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
Voltage - Rated DC :
80V
Collector Emitter Voltage (VCEO) :
80V
Mount :
Through Hole
Transistor Type :
NPN - Darlington
Mounting Type :
Through Hole
hFE Min :
300
DC Current Gain (hFE) (Min) @ Ic, Vce :
500 @ 10A 3V
Collector Emitter Breakdown Voltage :
80V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Current - Collector Cutoff (Max) :
500μA
Number of Terminations :
3
Collector Emitter Saturation Voltage :
1.2V
Peak Reflow Temperature (Cel) :
245
JESD-30 Code :
R-PSFM-T3
Lead Free :
Lead Free
Collector Base Voltage (VCBO) :
80V
Datasheets
SGSD100
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics SGSD100 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Base Part Number:SGSD100, Mounting Type:Through Hole, Number of Terminations:3, SGSD100 pinout, SGSD100 datasheet PDF, SGSD100 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics SGSD100 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics SGSD100


NPN - Darlington 500μA 1 Elements 3 Terminations TO-247-3 Tube Through Hole

SGSD100 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 500 @ 10A 3V.The collector emitter saturation voltage is 1.2V, which allows for maximum design flexibility.When VCE saturation is 3.5V @ 80mA, 20A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 3.3V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 25A.A maximum collector current of 25A volts can be achieved.

SGSD100 Features


the DC current gain for this device is 500 @ 10A 3V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 3.5V @ 80mA, 20A
the emitter base voltage is kept at 3.3V
the current rating of this device is 25A


SGSD100 Applications


There are a lot of STMicroelectronics
SGSD100 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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