SG2803J

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Configuration :

8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Collector-Emitter Voltage-Max :

50V

Transistor Element Material :

SILICON

Package / Case :

--

Voltage - Collector Emitter Breakdown (Max) :

50V

Qualification Status :

Not Qualified

JESD-30 Code :

R-CDIP-T18

Operating Temperature :

-55°C ~ 125°C (TA)

Operating Temperature (Min) :

-55°C

Current - Collector Cutoff (Max) :

--

Current - Collector (Ic) (Max) :

500mA

Transistor Application :

AMPLIFIER

Frequency - Transition :

--

DC Current Gain-Min (hFE) :

1000

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 350mA, 2V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e0

Power - Max :

--

Supplier Device Package :

18-CDIP

Operating Temperature (Max) :

125°C

Terminal Position :

Dual

Pin Count :

18

RoHS Status :

Non-RoHS Compliant

Transistor Type :

8 NPN Darlington

Reference Standard :

MIL

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 500μA, 350mA

Packaging :

Tube

Pbfree Code :

No

Surface Mount :

No

Series :

--

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

8

Polarity/Channel Type :

NPN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminals :

18

Reach Compliance Code :

not_compliant

Collector Current-Max (IC) :

0.5A

Mounting Type :

Through Hole

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Form :

THROUGH-HOLE