SD56150

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Current - Test :

500mA

Power Dissipation :

236W

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

65V

ECCN Code :

EAR99

Voltage - Rated DC :

32V

Min Operating Temperature :

-65°C

Max Power Dissipation :

236W

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Gain :

16.5dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

LDMOS

Packaging :

Tube

Case Connection :

SOURCE

Number of Elements :

1

Continuous Drain Current (ID) :

17A

Package / Case :

M252

Base Part Number :

SD56150

Terminal Form :

Flat

Number of Pins :

252

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Screw

Qualification Status :

Not Qualified

Number of Terminations :

4

Frequency :

860MHz

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Pin Count :

4

Max Operating Temperature :

150°C

JESD-30 Code :

R-PDFM-F4

Drain to Source Voltage (Vdss) :

65V

Current Rating :

17A

Power - Output :

150W