SD56120M

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Mfr.Part #
SD56120M
Manufacturer
STMicroelectronics
Package / Case
M252
Datasheet
Download
Description
FET RF 65V 860MHZ M252
Stock
39,335
In Stock :
39,335

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - RF
Gain :
16dB
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
2
Voltage - Test :
32V
Element Configuration :
Dual
Drain to Source Voltage (Vdss) :
65V
Drain to Source Breakdown Voltage :
65V
Case Connection :
SOURCE
Packaging :
Tube
Number of Pins :
5
Number of Terminations :
4
Polarity/Channel Type :
N-Channel
Input Capacitance :
221pF
Current Rating :
14A
Base Part Number :
SD56120
Continuous Drain Current (ID) :
14A
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
65V
Min Operating Temperature :
-65°C
Max Output Power :
120W
Mount :
Screw
Max Operating Temperature :
200°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Transistor Type :
LDMOS
Pin Count :
4
Lead Free :
Lead Free
ECCN Code :
EAR99
Frequency :
860MHz
Current - Test :
400mA
Package / Case :
M252
Transistor Application :
AMPLIFIER
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code :
R-PDFM-F4
Max Power Dissipation :
236W
Min Breakdown Voltage :
65V
Power Dissipation :
236W
Terminal Form :
Flat
Introducing Transistors - FETs, MOSFETs - RF STMicroelectronics SD56120M from Chip IC,where excellence meets affordability. This product stands out with its Gain:16dB, Number of Pins:5, Number of Terminations:4, Base Part Number:SD56120, Package / Case:M252, SD56120M pinout, SD56120M datasheet PDF, SD56120M amp .Beyond Transistors - FETs, MOSFETs - RF STMicroelectronics SD56120M ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics SD56120M


SD56120M datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at

SD56120M Description

 

 

SD56120M N-channel Power MOSFET developed using SuperMESH technology. SD56120M MOSFET revolutionary, Avalanche-rugged, high-voltage Power technology relies on an original, exclusive vertical structure. It results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. STMicroelectronics SD56120M is utilized in Switching applications.

 

 

SD56120M Features

 

Ultra low gate charge

Worldwide best FOM

Best RDS(on)

100% avalanche tested

Zener-protected

 

 

SD56120M Applications

 

Notebook PC

Synchronous Buck for Notebook Vcore and Server

Notebook Battery Pack

Load Switch


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