SD56120M

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Mfr.Part #
SD56120M
Manufacturer
STMicroelectronics
Package / Case
M252
Datasheet
Download
Description
FET RF 65V 860MHZ M252
Stock
39,335
In Stock :
39,335

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - RF
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
65V
Pin Count :
4
Current Rating :
14A
Element Configuration :
Dual
Polarity/Channel Type :
N-Channel
Number of Elements :
2
Min Operating Temperature :
-65°C
Frequency :
860MHz
Transistor Type :
LDMOS
Mount :
Screw
Power Dissipation :
236W
Radiation Hardening :
No
Input Capacitance :
221pF
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Max Power Dissipation :
236W
Base Part Number :
SD56120
Packaging :
Tube
Gain :
16dB
Max Operating Temperature :
200°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Case Connection :
SOURCE
Transistor Application :
AMPLIFIER
Drain to Source Breakdown Voltage :
65V
Max Output Power :
120W
Continuous Drain Current (ID) :
14A
Current - Test :
400mA
Number of Pins :
5
JESD-30 Code :
R-PDFM-F4
Package / Case :
M252
Terminal Form :
Flat
Min Breakdown Voltage :
65V
Voltage - Test :
32V
Number of Terminations :
4
Drain to Source Voltage (Vdss) :
65V
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Datasheets
SD56120M
Introducing Transistors - FETs, MOSFETs - RF STMicroelectronics SD56120M from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:SD56120, Gain:16dB, Number of Pins:5, Package / Case:M252, Number of Terminations:4, SD56120M pinout, SD56120M datasheet PDF, SD56120M amp .Beyond Transistors - FETs, MOSFETs - RF STMicroelectronics SD56120M ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics SD56120M


SD56120M datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at

SD56120M Description

 

 

SD56120M N-channel Power MOSFET developed using SuperMESH technology. SD56120M MOSFET revolutionary, Avalanche-rugged, high-voltage Power technology relies on an original, exclusive vertical structure. It results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. STMicroelectronics SD56120M is utilized in Switching applications.

 

 

SD56120M Features

 

Ultra low gate charge

Worldwide best FOM

Best RDS(on)

100% avalanche tested

Zener-protected

 

 

SD56120M Applications

 

Notebook PC

Synchronous Buck for Notebook Vcore and Server

Notebook Battery Pack

Load Switch


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