SD56120M

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Mfr.Part #
SD56120M
Manufacturer
STMicroelectronics
Package / Case
M252
Datasheet
Download
Description
FET RF 65V 860MHZ M252
Stock
39,335
In Stock :
39,335

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - RF
Voltage - Test :
32V
Radiation Hardening :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current Rating :
14A
Transistor Application :
AMPLIFIER
Packaging :
Tube
Frequency :
860MHz
Drain to Source Breakdown Voltage :
65V
Lead Free :
Lead Free
Terminal Form :
Flat
Pin Count :
4
Element Configuration :
Dual
Package / Case :
M252
Min Breakdown Voltage :
65V
Min Operating Temperature :
-65°C
Number of Terminations :
4
Max Power Dissipation :
236W
RoHS Status :
ROHS3 Compliant
Base Part Number :
SD56120
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gain :
16dB
Power Dissipation :
236W
Transistor Type :
LDMOS
Max Output Power :
120W
ECCN Code :
EAR99
Drain to Source Voltage (Vdss) :
65V
Gate to Source Voltage (Vgs) :
20V
Mount :
Screw
Number of Pins :
5
Continuous Drain Current (ID) :
14A
Input Capacitance :
221pF
Voltage - Rated DC :
65V
Current - Test :
400mA
Case Connection :
SOURCE
Polarity/Channel Type :
N-Channel
Number of Elements :
2
JESD-30 Code :
R-PDFM-F4
Max Operating Temperature :
200°C
Datasheets
SD56120M
Introducing Transistors - FETs, MOSFETs - RF STMicroelectronics SD56120M from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:M252, Number of Terminations:4, Base Part Number:SD56120, Gain:16dB, Number of Pins:5, SD56120M pinout, SD56120M datasheet PDF, SD56120M amp .Beyond Transistors - FETs, MOSFETs - RF STMicroelectronics SD56120M ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics SD56120M


SD56120M datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at

SD56120M Description

 

 

SD56120M N-channel Power MOSFET developed using SuperMESH technology. SD56120M MOSFET revolutionary, Avalanche-rugged, high-voltage Power technology relies on an original, exclusive vertical structure. It results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. STMicroelectronics SD56120M is utilized in Switching applications.

 

 

SD56120M Features

 

Ultra low gate charge

Worldwide best FOM

Best RDS(on)

100% avalanche tested

Zener-protected

 

 

SD56120M Applications

 

Notebook PC

Synchronous Buck for Notebook Vcore and Server

Notebook Battery Pack

Load Switch


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