SBC856BDW1T1G
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- Mfr.Part #
- SBC856BDW1T1G
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS 2PNP 65V 0.1A SC88/SC70-6
- Stock
- 1,852
- In Stock ：
- 1,852
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- PNP
- Power Dissipation :
- 380mW
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 65V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Continuous Collector Current :
- -100mA
- Lead Free :
- Lead Free
- Series :
- Automotive, AEC-Q101
- Pin Count :
- 6
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 65V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Surface Mount :
- yes
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 65V
- Collector Emitter Saturation Voltage :
- -650mV
- Weight :
- 28.009329mg
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 6
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Dual
- Radiation Hardening :
- No
- Published :
- 2012
- Max Collector Current :
- 100mA
- Number of Terminations :
- 6
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Transistor Type :
- 2 PNP (Dual)
- Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Elements :
- 2
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 220
- Max Power Dissipation :
- 380mW
- Datasheets
- SBC856BDW1T1G
SBC856BDW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ON Semiconductor stock available at
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