SBC847CDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Number of Terminations :

6

Pbfree Code :

yes

Configuration :

SEPARATE, 2 ELEMENTS

Factory Lead Time :

8 Weeks

Max Frequency :

100MHz

Transition Frequency :

100MHz

Width :

1.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

50V

Length :

2.2mm

Max Power Dissipation :

380mW

Number of Elements :

2

Transistor Element Material :

SILICON

Published :

2007

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Collector Emitter Breakdown Voltage :

45V

Frequency - Transition :

100MHz

Collector Emitter Voltage (VCEO) :

45V

Number of Pins :

6

Transistor Type :

2 NPN (Dual)

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Current - Collector Cutoff (Max) :

15nA ICBO

Radiation Hardening :

No

Base Part Number :

BC847CD

Emitter Base Voltage (VEBO) :

6V

Package / Case :

6-TSSOP, SC-88, SOT-363

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Max Collector Current :

100mA

Collector Emitter Saturation Voltage :

600mV

Pin Count :

6

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Polarity :

NPN

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Height :

1mm

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99