SBC847AWT1G
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- Mfr.Part #
- SBC847AWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC70-3
- Stock
- 33,540
- In Stock ：
- 33,540
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 100MHz
- Surface Mount :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 100mA
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 150mW
- Factory Lead Time :
- 2 Weeks
- Pin Count :
- 3
- Current - Collector (Ic) (Max) :
- 100mA
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Halogen Free :
- Halogen Free
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Published :
- 2007
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 45V
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Collector Emitter Saturation Voltage :
- 250mV
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SBC847AWT1G
NPN -55°C~150°C TJ 15nA ICBO NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
SBC847AWT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 110 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
SBC847AWT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC847AWT1G Applications
There are a lot of ON Semiconductor
SBC847AWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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