SBC817-40LT1G
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- Mfr.Part #
- SBC817-40LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 8,815
- In Stock ：
- 8,815
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 3.04mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Halogen Free :
- Halogen Free
- Collector Emitter Breakdown Voltage :
- 45V
- Base Part Number :
- BC817
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Collector Emitter Voltage (VCEO) :
- 45V
- Lead Free :
- Lead Free
- Width :
- 2.64mm
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 45V
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Published :
- 2007
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 700mV
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Surface Mount :
- yes
- Series :
- Automotive, AEC-Q101
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Height :
- 1.11mm
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 300mW
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 50V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SBC817-40LT1G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC817-40LT1G Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 500mA volts is possible.
SBC817-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC817-40LT1G Applications
There are a lot of ON Semiconductor
SBC817-40LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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