RN2902,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Reach Compliance Code :

Unknown

Current - Collector (Ic) (Max) :

100mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Frequency - Transition :

200MHz

Number of Elements :

2

Terminal Form :

Gull wing

Resistor - Base (R1) :

10k Ω

Pbfree Code :

yes

Operating Temperature (Max) :

150°C

Transition Frequency :

200MHz

JESD-30 Code :

R-PDSO-G6

Transistor Type :

2 PNP - Pre-Biased (Dual)

Polarity/Channel Type :

PNP

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Power - Max :

200mW

Number of Terminations :

6

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Mounting Type :

Surface Mount

Surface Mount :

yes

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Package / Case :

6-TSSOP, SC-88, SOT-363

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

10k Ω

Packaging :

Cut Tape (CT)

Voltage - Collector Emitter Breakdown (Max) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V