RN1102MFV,L3F

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Mfr.Part #
RN1102MFV,L3F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SOT-723
Datasheet
Download
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Stock
271,515
In Stock :
271,515

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
hFE Min :
30
Continuous Collector Current :
100mA
Polarity :
NPN
Collector Emitter Breakdown Voltage :
50V
Max Breakdown Voltage :
50V
Resistor - Base (R1) :
10 k Ω
Mount :
Surface Mount
Factory Lead Time :
12 Weeks
Max Collector Current :
100mA
Mounting Type :
Surface Mount
Emitter Base Voltage (VEBO) :
10V
Published :
2011
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 10mA 5V
Packaging :
Tape and Reel (TR)
Current - Collector Cutoff (Max) :
500nA
Transistor Type :
NPN - Pre-Biased
Collector Emitter Voltage (VCEO) :
300mV
Max Power Dissipation :
150mW
RoHS Status :
RoHS Compliant
Resistor - Emitter Base (R2) :
10 k Ω
Package / Case :
SOT-723
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500μA, 5mA
Datasheets
RN1102MFV,L3F
Introducing Transistors - Bipolar (BJT) - Single, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN1102MFV,L3F from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:SOT-723, RN1102MFV,L3F pinout, RN1102MFV,L3F datasheet PDF, RN1102MFV,L3F amp .Beyond Transistors - Bipolar (BJT) - Single, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN1102MFV,L3F ,we also offer MMUN2211LT1G, MMUN2214LT1G, MMUN2233LT1G, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation RN1102MFV,L3F


RN1102MFV,L3F datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at

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