RM8N650IP

Manufacturer :

Rectron USA

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Vgs (Max) :

±30V

Transistor Polarity :

N-Channel

Subcategory :

MOSFETs

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Channel Mode :

Enhancement

Operating Temperature :

-55°C ~ 150°C (TJ)

Product Type :

MOSFET

Rds On (Max) @ Id, Vgs :

540mOhm @ 4A, 10V

Packaging :

Case - TO-251

Manufacturer :

Rectron

Rise Time :

3.5 ns

Voltage :

Vdss - 650V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

650 V

Supplier Device Package :

TO-251

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On, Min Rds On) :

10V

Series :

-

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Package :

Tube

Number of Channels :

1 Channel

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

680 pF @ 50 V

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

Maximum Operating Temperature :

+ 150 C

Power Dissipation (Max) :

80W (Tc)

Brand :

Rectron

Transistor Type :

1 N-Channel

RoHS :

Y

Capacitance :

Input Capacitance (Ciss) - 680pF

Product Status :

Active

Package / Case :

TO-251-3 Stub Leads, IPak