RFD8P06LE

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature (Max) :

175°C

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.33Ohm

Power Dissipation-Max (Abs) :

48W

JEDEC-95 Code :

TO-251AA

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Form :

THROUGH-HOLE

Drain Current-Max (Abs) (ID) :

8A

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

60V

Surface Mount :

No

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e0

Transistor Application :

SWITCHING

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

3

Polarity/Channel Type :

P-Channel

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE