RFD8P06E

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.3Ohm

JESD-30 Code :

R-PSIP-T3

JESD-609 Code :

e0

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

Single

JEDEC-95 Code :

TO-251AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature (Max) :

175°C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

No

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max (Abs) :

48W

Number of Terminals :

3

Polarity/Channel Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

MEGAFET

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

8A