R6509KNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

94W Tc

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

650V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.585Ohm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Factory Lead Time :

8 Weeks

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

585m Ω @ 2.8A, 10V

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

9A

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

Transistor Application :

SWITCHING

Surface Mount :

yes

DS Breakdown Voltage-Min :

650V

Operating Temperature :

150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

27A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

158 mJ

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5V @ 230μA