QSX3TR
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- Mfr.Part #
- QSX3TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 30V 5A TSMT6
- Stock
- 2,437
- In Stock ：
- 2,437
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Max Power Dissipation :
- 1.25W
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 6
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 360MHz
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 5A
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- hFE Min :
- 270
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Collector Emitter Breakdown Voltage :
- 30V
- Transition Frequency :
- 360MHz
- Element Configuration :
- Single
- Pin Count :
- 6
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Collector Current :
- 5A
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Published :
- 2004
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 30V
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- QSX
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Number of Pins :
- 6
- Radiation Hardening :
- No
- Datasheets
- QSX3TR
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QSX3TR Overview
In this device, the DC current gain is 270 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 30mA, 1.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 360MHz.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
QSX3TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
QSX3TR Applications
There are a lot of ROHM Semiconductor
QSX3TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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