QST7TR
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- Mfr.Part #
- QST7TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 30V 1.5A TSMT6
- Stock
- 2,899
- In Stock ：
- 2,899
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 50mA, 1A
- Collector Emitter Voltage (VCEO) :
- 370mV
- Published :
- 2003
- Collector Emitter Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 500mW
- Terminal Finish :
- TIN SILVER COPPER
- Gain Bandwidth Product :
- 280MHz
- hFE Min :
- 270
- Max Breakdown Voltage :
- 30V
- Max Collector Current :
- 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Number of Terminations :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- -1.5A
- Emitter Base Voltage (VEBO) :
- -6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Base Part Number :
- QST
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 500mW
- Current Rating :
- -1.5A
- Collector Base Voltage (VCBO) :
- -30V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Voltage - Rated DC :
- -30V
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Transition Frequency :
- 280MHz
- Collector Emitter Saturation Voltage :
- -200mV
- ECCN Code :
- EAR99
- Datasheets
- QST7TR
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QST7TR Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 370mV @ 50mA, 1A.A -1.5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
QST7TR Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 370mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 280MHz
QST7TR Applications
There are a lot of ROHM Semiconductor
QST7TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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