QST6TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

360MHz

Collector Emitter Voltage (VCEO) :

12V

Element Configuration :

Single

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e1

Max Power Dissipation :

1.25W

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Number of Elements :

1

Mount :

Surface Mount

Current Rating :

-2A

Collector Emitter Breakdown Voltage :

12V

Operating Temperature :

150°C TJ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Lead Free :

Lead Free

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

TIN SILVER COPPER

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-12V

Collector Base Voltage (VCBO) :

15V

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

Base Part Number :

QST

hFE Min :

270

Max Collector Current :

2A

Published :

2005

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

12V

HTS Code :

8541.21.00.75

Pbfree Code :

yes

Number of Terminations :

6

Transistor Type :

PNP

Mounting Type :

Surface Mount

Transition Frequency :

360MHz

Vce Saturation (Max) @ Ib, Ic :

180mV @ 50mA, 1A

Power - Max :

500mW

Terminal Form :

Gull wing

Radiation Hardening :

No