QST4TR
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- Mfr.Part #
- QST4TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 12V 3A TSMT6
- Stock
- 2,256
- In Stock ：
- 2,256
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- QST
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Pin Count :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Gain Bandwidth Product :
- 280MHz
- JESD-609 Code :
- e1
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 6
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 15V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 12V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 12V
- Current - Collector (Ic) (Max) :
- 3A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1.25W
- Number of Elements :
- 1
- Number of Pins :
- 6
- Max Collector Current :
- 3A
- Transition Frequency :
- 280MHz
- Published :
- 2005
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- ECCN Code :
- EAR99
- hFE Min :
- 270
- Datasheets
- QST4TR
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QST4TR Overview
In this device, the DC current gain is 270 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 30mA, 1.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
QST4TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz
QST4TR Applications
There are a lot of ROHM Semiconductor
QST4TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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