QST3TR
- Mfr.Part #
- QST3TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A TSMT6
- Stock
- 5,833
- In Stock :
- 5,833
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- JESD-609 Code :
- e1
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 200MHz
- Number of Elements :
- 1
- Pin Count :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 5A
- Published :
- 2004
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- hFE Min :
- 270
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 40mA, 2A
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Power Dissipation :
- 1.25W
- Number of Pins :
- 6
- Factory Lead Time :
- 20 Weeks
- Number of Terminations :
- 6
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- TIN SILVER COPPER
- Radiation Hardening :
- No
- Transition Frequency :
- 200MHz
- Pbfree Code :
- yes
- Current - Collector (Ic) (Max) :
- 5A
- Base Part Number :
- QST
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Datasheets
- QST3TR

PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QST3TR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 500mA 2V.When VCE saturation is 250mV @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 5A volts can be achieved.
QST3TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 40mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
QST3TR Applications
There are a lot of ROHM Semiconductor
QST3TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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