PUMX2,125

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

50V

Radiation Hardening :

No

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Transistor Type :

2 NPN (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Current - Collector (Ic) (Max) :

150mA

Max Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

7V

Transition Frequency :

100MHz

Terminal Form :

Gull wing

Pin Count :

6

Number of Elements :

2

Frequency :

100MHz

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100nA ICBO

Power Dissipation :

300mW

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

60V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 50mA

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Published :

2009

Operating Temperature :

150°C TJ

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

150mA

Polarity :

NPN