PUMF12,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

150mV

Collector Emitter Breakdown Voltage :

40V

Max Operating Temperature :

150°C

Max Output Current :

-100A

Min Operating Temperature :

-65°C

Number of Elements :

2

Max Power Dissipation :

300mW

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V / 120 @ 1mA 6V

Operating Supply Voltage :

-50V

RoHS Status :

RoHS Compliant

Element Configuration :

Dual

Transition Frequency :

100MHz

Polarity :

NPN, PNP

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Mount :

Surface Mount

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

100MHz

Resistor - Emitter Base (R2) :

47k Ω

Number of Terminations :

6

Resistor - Base (R1) :

22k Ω

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.1

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Published :

2002

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 200mV @ 5mA, 50mA

Transistor Type :

1 NPN Pre-Biased, 1 PNP

JESD-609 Code :

e3

Pin Count :

6

Current - Collector Cutoff (Max) :

1μA

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

8 Weeks

Max Breakdown Voltage :

40V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA