PUMF12,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V / 120 @ 1mA 6V

Number of Elements :

2

Package / Case :

6-TSSOP, SC-88, SOT-363

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

40V

Operating Supply Voltage :

-50V

RoHS Status :

RoHS Compliant

Number of Terminations :

6

Max Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.1

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Factory Lead Time :

8 Weeks

Max Power Dissipation :

300mW

Min Operating Temperature :

-65°C

Resistor - Emitter Base (R2) :

47k Ω

Current - Collector Cutoff (Max) :

1μA

Resistor - Base (R1) :

22k Ω

Collector Emitter Voltage (VCEO) :

150mV

Pin Count :

6

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Max Breakdown Voltage :

40V

Frequency - Transition :

100MHz

JESD-609 Code :

e3

Polarity :

NPN, PNP

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Terminal Finish :

Tin (Sn)

Transition Frequency :

100MHz

Element Configuration :

Dual

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Published :

2002

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 200mV @ 5mA, 50mA

Max Output Current :

-100A