PUMD16,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Length :

6.35mm

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Factory Lead Time :

4 Weeks

Max Breakdown Voltage :

50V

Min Operating Temperature :

-65°C

JESD-609 Code :

e3

Package / Case :

6-TSSOP, SC-88, SOT-363

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Published :

2005

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

Number of Elements :

2

Max Power Dissipation :

300mW

Resistor - Base (R1) :

22k Ω

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Weight :

453.59237mg

Number of Pins :

6

Tolerance :

5%

Polarity :

NPN, PNP

Zener Voltage :

3.6V

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Base Part Number :

MD16

Terminal Finish :

Tin (Sn)

Power Dissipation :

200mW

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.1

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47k Ω

hFE Min :

80

Height :

6.35mm

Test Current :

5mA

Lead Free :

Lead Free

Number of Terminations :

6

Width :

6.35mm

Current - Collector Cutoff (Max) :

1μA

Max Output Current :

100mA

Mount :

Surface Mount

Operating Supply Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA