PUMB2,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Resistor - Emitter Base (R2) :

47k Ω

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Voltage - Collector Emitter Breakdown (Max) :

50V

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

1μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Published :

2002

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Base Part Number :

MB2

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Pins :

6

JESD-609 Code :

e3

HTS Code :

8541.21.00.95

Surface Mount :

yes

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor - Base (R1) :

47k Ω

Package / Case :

6-TSSOP, SC-88, SOT-363

Current - Collector (Ic) (Max) :

100mA

Terminal Finish :

Tin (Sn)

Transistor Type :

2 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Polarity :

PNP

Power - Max :

300mW