PUMB16,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector (Ic) (Max) :

100mA

Power - Max :

300mW

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transistor Type :

2 PNP - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

1μA

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

47k Ω

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Collector Emitter Breakdown (Max) :

50V

Reference Standard :

IEC-60134

Polarity/Channel Type :

PNP

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 2.1

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Surface Mount :

yes

Published :

2009

Number of Elements :

2

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Terminal Finish :

Tin (Sn)

Resistor - Base (R1) :

22k Ω

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

JESD-30 Code :

R-PDSO-G6

Package / Case :

6-TSSOP, SC-88, SOT-363

Base Part Number :

MB16