PQMH2Z

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Published :

2015

Resistor - Base (R1) :

47k Ω

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Power - Max :

230mW

Series :

Automotive, AEC-Q101

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

150mV

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Case Connection :

COLLECTOR

Factory Lead Time :

4 Weeks

Current - Collector Cutoff (Max) :

1μA

Terminal Form :

NO LEAD

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101; IEC-60134

Resistor - Emitter Base (R2) :

47k Ω

Number of Terminations :

6

Transistor Application :

SWITCHING

Transistor Type :

2 NPN - Pre-Biased (Dual)

Frequency - Transition :

230MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Transition Frequency :

230MHz

JESD-30 Code :

R-PDSO-N6

Transistor Element Material :

SILICON

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

230mW

Package / Case :

6-XFDFN Exposed Pad